師資成員 -吳鳳科技大學 電機工程系
培育雲端化介面技術與智動化技術人才的專業系所

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期刊論文(Journal Paper)

1. K. M. Uang and S. J. Wang, “The Simulation of the I-V Characteristics of Composite Resonant Tunneling Diodes for Logic Applications”, 吳鳳學報, pp. 62-70, 1997.
2. 陳聰敏、汪楷茗、吳文誌, “圖形理論與機率統計應用於積體電路佈線”, 吳鳳學報, 2001.
3. 陳聰敏、汪楷茗、吳文誌, “蕭特基二極體元件結構特性之設計與模擬”, 吳鳳學報, May 2003.
4. Shu-Cheng Chang, Shui-Jinn Wang, Kai-Ming Uang, and Bor-Wen Liou, “Design and fabrication of high breakdown voltage 4H-SiC Schottky barrier diodes with floating metal ring edge terminations”, Solid-State Electronics, Vol. 49, pp. 437-444, 2005 (SCI).
5. Shu-Cheng Chang, Shui-Jinn Wang, Kai-Ming Uang, Bor-Wen Liou, “Investigation of Au/Ti/Al ohmic contact to N-type 4H–SiC”, Solid-State Electronics, 49, pp. 1937-1941, 2005 (SCI).
6. Kai-Ming Uang, Shui-Jinn Wang, Shiue-Lung Chen, Chin-Kun Wu, Shu-Cheng Chang, Tron-Min Chen, and Bor-Wen Liou, “High Power GaN-Based LEDs with Transparent Indium-Zinc-Oxide Films”, Jpn. J. Appl. Phys., Vol. 44, No. 4B, pp. 2516-2519, 2005 (SCI).
7. Shui-Jinn Wang, Kai-Ming Uang, Shiue-Lung Chen, Yu-Cheng Yang Shu-Cheng Chang, Tron-Min Chen, and Chao-Hsuing Chen, “Use of patterned laser lift-off process and electroplating nickel layer for the fabrication of vertical-structured GaN-based light-emitting diodes“, Applied Physics Letters , 87, 011111, 2005 (SCI).
8. Kai-Ming Uang, Shui-Jinn Wang, Shiue-Lung Chen, Yu-Cheng Yang, Tron-Min Chen and Bor-Wen Liou, “Effect of Surface Treatment on the Performances of Vertical-structure GaN-based High-power LEDs with Electroplating Metallic Substrate”, Jpn. J. Appl. Phys, Vol. 45, No. 4B, pp. 3436-3441, 2006 (SCI).
9. Kai-Ming Uang, Shui-Jinn Wang, Shiue-Lung Chen, Tron-Min Chen, and Bor-Wen Liou, “The use of transparent indium-zinc oxide/(oxidized-Ni/Au) ohmic contact to GaN-based light-emitting diodes for light output improvement”, to appear in Thin Solid Films, 2006 (SCI).
10. Shui-Jinn Wang, Shiue-Lung Chen, Kai-Ming Uang, Wei-Chi Lee, Tron-Min Chen, and Chao-Hsuing Chen, “The use of transparent conducting indium-zinc oxide film as a current spreading layer for vertical-structured high-power GaN-based light-emitting diodes”, IEEE Photonics Technology Letters, Vol. 18, No. 10, pp. 1146-1148, May 15, 2006 (SCI).
11. Shui-Jinn Wang, Tron-Min Chen, Kai-Ming Uang, Shiue-Lung Chen, Tung-Sheng Hsiao, Shu-Cheng Chang, Hon-Yi Kuo, and Bor-Wen Liou, “A Vertical-Structured Ni/GaN Schottky Barrier Diode Using Electroplating Nickel Substrate”, Jpn. J. Appl. Phys., Vol. 45, No. 22, pp. L555-L558, 2006 (SCI).
12. Tron-Min Chen, Shui-Jinn Wang, Kai-Ming Uang, Shiue-Lung Chen, Wei-Chih Tsai, Wei-Chi Lee, and Ching-Chung Tsai, “Use of Anisotropic Laser Etching to the Top n-GaN Layer to Alleviate Current Crowding Effect in Vertical-Structured GaN-Based Light-Emitting Diodes”, Applied Physics Letters, 90, 041115, 2007 (SCI).
13. Shiue-Lung Chen, Shui-Jinn Wang, Kai-Ming Uang, Tron-Min Chen, Wei-Chi Lee, and Bor-Wen Liou, “Fabrication of Dicing-Free Vertical-Structured High Power GaN-Based Light-Emitting Diodes with Selective Nickel Electroplating and Patterned Laser Liftoff Techniques”, IEEE Photonics Technology Letters, Vol. 19, No. 6, pp. 351-353, March 15, 2007 (SCI).
14. Hon-Yi Kuo, Shui-Jinn Wang, Pei-Ren Wang, Kai-Ming Uang, Tron-Min Chen, Ching-Chung Tsai, and Hon Kuan, “A Sn-based Metal Substrate Technology for the Fabrication of Vertical-Structured GaN-Based Light-Emitting Diodes”, Applied Physics Letters, 92, 021105, 2008.
15. Tron-Min Chen, Shui-Jinn Wang, Kai-Ming Uang, Hon-Yi Kuo, Ching-Chung Tsai, Wei-Chi Lee, and Hon Kuan,” Current Spreading and Blocking Designs for Improving Light Output Power from the Vertical-Structured GaN-Based Light-Emitting Diodes”, IEEE Photonics Technology Letters, Vol. 20, pp. 703-705, 2008.
16. Kai-Ming Uang, Shui-Jinn Wang, Tron-Min Chen, Wei-Chi Lee, Shiue-Lung Chen, Yu-Yu Wang, and Hon Kuan, “Enhanced performance of vertical GaN-based light-emitting diodes with a current-blocking layer and electroplated nickel substrate”, Jpn. J. Appl. Phys. Vol. 48, No. 10, 102101, 2009 (SCI).
17. Wei-Chi Lee, Kai-Ming Uang, Tron-Min Chen, Der-Ming Kuo, Pei-Ren Wang, Po-Hong Wang, and Shui-Jinn Wang, “Enhanced Light Output of Vertical-Structured GaN-Based LEDs with Surface Roughening using KrF Laser and ZnO Nanorods”, to appear in Jpn. J. Appl. Phys., 2010.
18. Der-Ming Kuo, Shui-Jinn Wang, Kai-Ming Uang, Tron-Min Chen, Wei-Chih Tsai, Wen-I Hsu, Wei-Chi Lee, Pei-Ren Wang, and Chih-Ren Tseng, “The Preparation of SiO2 Nanotubes with Controllable Inner/Outer Diameter and Length using Hydrothermally Grown ZnO Nanowires as Templates”, to appear in Jpn. J. Appl. Phys., 2010.

研討會論文(Conference Paper)

1. Kai-Ming Uang, Zen-Gon Wen, Shu-Cheng Chang, Shu-Ru Wang, and Shui-Jinn Wang, “On the Recrystallization of a-Si for Low-Temperature Poly-Si Thin Film Transistor”, Proceeding of Optics and Photonics Taiwan ‘01, pp. 65-67, 2001.
2. Kai-Ming Uang, Shiue-Lung Chen, Kuo-Feng Hsu, and Shui-Jinn Wang, “A Study of Transparent Indium Zinc Oxide Contact to n-AlGaInP Layers for High Brightness LEDs”, Proceeding of Optics and Photonics Taiwan ‘02, pp. 103-105, 2002.
3. Kai-Ming Uang, Shiue-Lung Chen, Chin-Kun Wu, Shu-Cheng Chang, Shui-Jinn Wang, and Bor-Wen Liu, “Light Extraction Improvement in GaN-Based LED using Transparent Indium-Zinc-Oxide films”, 鍍膜與奈米科技研討會, Hsinchu, September 2003.
4. Shiue-Lung Chen, Kai-Ming Uang, Chin-Kun Wu, Shu-Cheng Chang, Shui-Jinn Wang, and Bor-Wen Liu, “The use of Indium-Zinc-Oxide Films as a Transparent Conduction Layer for the fabrication of GaN-based LEDs”, Proceedings of the 2003 Electron Devices and Materials Symposium (EDMS), Taipei, November 2003.
5. Shui-Jinn Wang, Shiue-Lung Chen, Kai-Ming Uang, Chin-Kun Wu, and Tron-Min Chen, “High Power GaN-Based LEDs with Transparent Indium-Zinc-Oxide Films”, International Conference on Solid State Devices and materials (SSDM'04), Tokyo, Japan, D-7-2, pp. 802-803, 2004.
6. Shu-Cheng Chang, Shui-Jinn Wang, Kai-Ming Uang, Bor-Wen Liou, “Vertical-structured Ni/n-GaN Schottky Diode with Electroplating Nickel Substrate”, IEEE Device Research Conference (DRC), University of California, Santa Barbara, Santa Barbara, CA, June 20 – 23, 2005.
7. Shui-Jinn Wang, Shiue-Lung Chen, Kai-Ming Uang, Yu-Cheng Yang, Tron-Min Chen, and Bor-Wen Liou, “Effect of Surface Treatment on the performances of Vertical-structured GaN-based LEDs with Electroplating Metallic Substrate”, IEEE Device Research Conference (DRC), University of California, Santa Barbara, Santa Barbara, CA, June 20 – 23, 2005.
8. Kai-Ming Uang, Shui-Jinn Wang, Shiue-Lung Chen, Yu-Cheng Yang, Tron-Min Chen, and Bor-Wen Liou, “Effect of Surface Treatment on the performances of Vertical-structure GaN-based High-power LEDs with Electroplating Metallic Substrate”, International Conference on Solid State Devices and materials (SSDM'05), September 13-15, Kobe, Hyogo, Japan, pp. 708-709, 2005.
9. Kai-Ming Uang, Shui-Jinn Wang, Shiue-Lung Chen, Wei-Chi Lee, Tron-Min Chen, and Bor-Wen Liou, “Fabrication of N-Side-Up Vertical-Structure GaN-Based Light-Emitting Diodes with an Electroplating Nickel Substrate”, OPT'05, Tainan, 2005.
10. Shui-Jinn Wang, Tron-Min Chen, Kai-Ming Uang, Shiue-Lung Chen, Ching-Chung Tsai, Bor-Wen Liou, and Su-Hua Yang, “Use of anisotropic laser etching and transparent conducting layer to alleviate current crowding effect in a vertical-structure GaN-based light-emitting diode”, IEEE Device Research Conference (DRC), University Park, PA, USA, June 26-28, 2006.
11. Shui-Jinn Wang, Shiue-Lung Chen, Kai-Ming Uang, Wei-Chi Lee, Tron-Min Chen, Bor-Wen Liou, and Su-Hua Yang, “Fabrication of High-Power Vertical GaN-Based Light-Emitting Diodes with Selective Nickel Electroplating and Patterned Laser Lift-Off Techniques”, IEEE Device Research Conference (DRC), University Park, PA, USA, June 26-28, 2006.
12. Shui-Jinn Wang, Tron-Min Chen, Kai-Ming Uang, Shiue-Lung Chen, Der-Ming Kuo, Hon-Yi Kuo, Bor-Wen Liou, and Su-Hua Yang, “Junction Temperature and Thermal Resistance Measurement in High-Power Light Emitting Diodes Using A Real-Time Diode Forward Voltage Sampling Technique”, International Conference on Solid State Devices and materials (SSDM'06), Japan, 2006.
13. Kai-Ming Uang, Shui-Jinn Wang, Tron-Min Chen, Chih-Chen Lai, Wei-Chi Lee, Hon-Yi Kou, and Hon Kuan, “Use of Micro-Etching Array to Enhance the Light Output Power of Vertical-Structure GaN-Based Light-Emitting Diodes”, 1st International Conference on White LEDs and Solid State Lighting (White LEDs-07), Minato-ku, Tokyo, Japan, November 26-30, 2007.
14. Tron-Min Chen, Shui-Jinn Wang, Kai-Ming Uang, Hon-Yi Kuo, Ching-Chung Tsai, Wei-Chi Lee, and Hon Kuan, “A Novel Current Spreading and Blocking Design to Enhance Light emission Uniformity and light output power of Vertical-structure GaN-based LEDs”, 1st International Conference on White LEDs and Solid State Lighting (White LEDs-07), Minato-ku, Tokyo, Japan, November 26-30, 2007.
15. Der-Ming Kuo, Kai-Ming Uang, Tron-Min Chen, Shiue-Lung Chen, Wei-Chi Lee, and Shui-Jinn Wang, “Use of meshed Indium-Zinc Oxide film as a transparent conduction layer for n-side-up AlGaInP LEDs with electroplated nickel substrate”, 2007 Optics and Photonics Taiwan (OPT2007).
16. Kai-Ming Uang, Tron-Min Chen, Shang-Yi Tsai, Wen-Chih Wu, and Shui-Jinn Wang, “Enhanced Performance of Vertical GaN-Based Light-Emitting Diodes with Current-Blocking Layer and Electroplated Substrate”, International Conference on Safety & Security Management and Engineering Technology, Chiayi, Taiwan, December 3-4, 2007.
17. Wei-Chi Lee, Kai-Ming Uang, Der-Ming Kuo, Jui-Chiang Chou, Tron-Min Chen, Hon-Yi Kuo, and Shui-Jinn Wang, “Use of Highly Reflective Ohmic Contact and Surface KrF Laser Roughening to Improve Light output of Vertical GaN-Based Light-Emitting Diodes”, 66th Device Research Conference, (DRC08) University of California, Santa Barbara, CA, USA, June 23-25, 2008.
18. Pei-Ren Wang, Shui-Jinn Wang, Kai-Ming Uang, Tron-Min Chen, Fu-Tze Tang, Hon-Yi Kuo, and Hon Kuan,“A Fast Sapphire Substrate Surface Roughening Technology using CO2 Laser for Enhancing Light Extraction of GaN-based Flip-Chip Light-Emitting Diodes”, 2008 International Conference on Solid State Devices and materials (SSDM'08), Tsukuba International Congress Center, Ibaraki, Japan, September 23-26,2008.
19. Kai-Ming Uang, Tron-Min Chen, Wei-Chi Lee, Pei-Ren Wang, Der-Ming Kuo,Yu-Yu Wang, Shui-Jinn Wang, and Hon Kuan,“Use of Current-Blocking Layer to Enhance Performance of Vertical GaN-based Light-Emitting Diodes with a Ni-Plating Substrate”, 2008 International Conference on Solid State Devices and materials (SSDM'08), Tsukuba International Congress Center, Ibaraki, Japan, September 23-26, 2008.
20. Der-Ming Kuo, Kai-Ming Uang, Wei-Chi Lee, Zhong-Han Wu, Tron-Min Chen, Hon-Yi Kuo, and Shui-Jinn Wang, “A surface Roughening Technology using Polystyrene Spheres to Improve Light Output of Vertical GaN-Based Light-Emitting Diodes”, International Electron Devices and Materials Symposia 2008 (IEDMS 2008), Taichung, Taiwan, R.O.C., November 28-29, 2008.
21. Kai-Ming Uang, Tron-Min Chen, Wen-Chih Wu, Shang-Yi Tsai, and Shui-Jinn Wang, “Vertical GaN-Based Light-Emitting Diodes with Indium-Zinc Oxide Texturing Layers Using Polystyrene Spheres Process”, International Conference on Safety & Security Management and Engineering Technology, Chiayi, Taiwan, Nov. 28-29, 2008.
22. W. C. Lee, K. M. Uang, T. M. Chen, D. M. Kuo, P. R. Wang, C. R. Tseng, C. K. Wu, S. J. Wang, “Enhanced Light Output of Vertical-Structured GaN-Based LEDs with Surface Roughening using KrF Laser and ZnO Nanorods”, (Oral), International Conference on Solid State Device and materials (SSDM 2009), Sendai, Japan, Oct. 7-9, 2009.
23. Shiang-Hau Chen, Tron-Min Chen, Kai-Ming Uang and Shui-Jinn Wang, “PET soft substrate on the growth of ZnO nanowires to develop a UV detector”, International Conference on Safety & Security Management and Engineering Technology, Chiayi, Taiwan, December 17-18, 2009.
24. Der-Ming Kuo, Shui-Jinn Wang, Kai-Ming Uang, Tron-Min Chen, Wei-Chi Lee, Pei-Ren Wang, and Zhong-Han Wu, "Enhanced performance of vertical GaN-based LEDs with highly reflective ohmic contact and nano-roughened indium-zinc oxide surface using a nanospheres process," SPIE PHOTONIC WEST (oral), 7617-27, Francisco, California, USA. Jan. 27, 2010.
25. Shui-Jinn Wang, Wei-Chi Lee, Kai-Ming Uang, Tron-Min Chen, Der-Ming Kuo, and Pei-Ren Wang, "Surface roughness of gallium nitride with volcano-like protrusions formed by KrF excimer laser etching," SPIE PHOTONIC WEST (oral), 7617-26, Francisco, California, USA. Jan. 27, 2010.

專利

1. 「用於製造氮化鎵基半導體垂直結構元件的雷射剝離方法」，中華民國專利，發明第I287309號，2007/09/21-2026/02/08。
2. 「具有附著反射層的垂直式發光二極體及其製造方法」，中華民國專利，發明第I293813號，2008/02/21-2026/02/16。
3. 「改善電流與發光分佈的發光二極體及其製造方法」，中華民國專利，發明第I294700號，2008/03/11-2026/04/13。
4. 「發光二極體接面溫度及熱阻之量測系統與方法」，中華民國專利，發明第I315399號，2009/10/01-2026/10/31。

近年執行及申請中之計畫